100W GaN amplification for 8–12GHz equipment
The HPAM-8000-12000-100 combines GaN devices with chip-and-wire construction in a low-profile metal module. It is intended for microwave test equipment, EMC systems and other RF assemblies requiring a compact high-power stage. The product description names an 8–12GHz operating band, while the electrical table lists 7.8–12.3GHz limits. Both are retained below so the requested frequency range can be checked against the final supplied specification.
Gain, efficiency and protection
Electrical values are specified at +28V DC, 25°C, 0dBm input and 50Ω unless a different condition is stated. Saturated output power is listed as 100W minimum and 160W maximum; the upper limit is not a guaranteed continuous output rating. Typical dynamic current of 15.5A applies at 50W output. The module provides a 3.3V TTL enable input, temperature alarm and current alarm. Thermal shutdown is specified at 85°C ±5°C; the interface description states automatic recovery below 65°C. An overcurrent condition above 20A lasting 5 seconds shuts the module down and requires power cycling.
Technical specifications
| Model | HPAM-8000-12000-100 |
|---|---|
| Nominal frequency band | 8–12GHz |
| Electrical-table frequency limits | 7.8–12.3GHz |
| Saturated output power | 100W minimum; 160W maximum |
| Power gain at Psat | ≥50dB |
| Gain flatness at Psat | ±1dB typical |
| Input S11 | −10dB maximum |
| Harmonics at 100W | −50dBc typical |
| Spurious at Psat | −60dBc typical |
| RF impedance | 50Ω input and output |
| Supply voltage | 28V DC typical |
| Quiescent current | 8.1A typical |
| Dynamic current at 50W | 15.5A typical |
| Power-added efficiency | 22% minimum; 30% typical |
| Maximum input without damage | +10dBm |
| Load mismatch rating at 100W | VSWR 5:1; all load phases; continuous, as specified |
| Operating / storage temperature | −20 to +50°C / −25 to +65°C; design targets |
| Relative humidity | ≤95%, non-condensing; design target |
| Dimensions / weight | 160 × 120 × 25mm maximum / 2kg maximum |
| RF input / output | SMA female / N-K female |
| DC and control interface | 7W2 mixed-contact D-sub male |
Mechanical reference and configuration
The module uses SMA and N-type RF connections with a 7W2 mixed-contact power/control connector. The housing image is an AI-generated reference rendering based on the supplied outline; surface finish and mechanical details must be confirmed against the final product drawing. The numerical specifications above come from the supplied document, not from the rendering.
Product reference rendering
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